| 引用本文： |
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马新宇1，陈茜1，廖杨芳1，2，肖清泉1，陈庆1，姚紫祎1，谢泉1.原位退火温度对Mg2Si薄膜结构及方块电阻的影响[J].低温物理学报,2017,39(5):16-20. [点击复制]
- Ma Xinyu1, Chen Qian1, Liao Yangfang1,2, Xiao Qingquan1, Chen Qing1, Yao Ziyi1,Xie quan1.Effects of In-situ Annealing Temperature on Structure and Square Resistance of Mg2Si Thin Films[J].LOW TEMPERATURE PHYSICAL LETTERS,2017,39(5):16-20. [点击复制]
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| 摘要: |
| 采用磁控溅射法和原位退火工艺在钠钙玻璃衬底上制备Mg2Si半导体薄膜。首先在钠钙玻璃衬底上依次溅射一定厚度的Si、Mg薄膜，冷却至室温后原位退火4 h，在400-600 ℃退火温度下制备出一系列Mg2Si薄膜样品。采用X射线衍射仪（XRD）、扫描电子显微镜（SEM）对Mg2Si薄膜样品的晶体结构和表面形貌进行表征，利用四探针测试仪测试薄膜样品的方块电阻，讨论了原位退火温度对Mg2Si薄膜结构、表面形貌及电学性能的影响。结果表明，采用原位退火方式成功在钠钙玻璃衬底上制备出单一相的Mg2Si薄膜，退火温度为550 ℃时，结晶度最好，连续性和致密性最强，方块电阻最小。这对后续Mg2Si薄膜器件的设计与制备提供了重要的参考 |
| 关键词: 磁控溅射，原位退火，Mg2Si薄膜，退火温度，方块电阻 |
| DOI： |
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| 基金项目:国家自然科学基金项目(61264004)，贵州省青年英才培养工程项目(黔省专合字[2012]152），贵州省科技厅、贵州大学联合资金项目(黔科合LH字[2014]7610)，贵州省科技攻关项目(黔科合GY字[2011]3015)，贵州省国际科技合作项目(黔科合外G字[2012]7004，[2013]7003)，贵州省教育厅“125”重大科技专项项目(黔教合重大专项字[2012]003)，贵州省自然科学基金项目(黔科合J字[2013]2209，[2014]2052)，贵州大学引进人才科研资助项目（贵大人基合字[2012]022）。 |
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| Effects of In-situ Annealing Temperature on Structure and Square Resistance of Mg2Si Thin Films |
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Ma Xinyu1, Chen Qian1, Liao Yangfang1,2, Xiao Qingquan1, Chen Qing1, Yao Ziyi1,Xie quan1
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| (1 Institute of Advanced Semiconductor Materials and Technology, College of Big date and Information Engineering, Guizhou University, Guiyang 550025, China
2 School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001) |
| Abstract: |
| Semiconductor Mg2Si thin films were prepared on soda-lime glass substrates by magnetron sputtering and in-situ annealing. Si films and Mg films were sputtering-deposited sequentially on the soda-lime glass substrates and cooled at room temperature. Subsequently, a series of Mg2Si thin films were prepared at different annealing temperatures ranging from 400 ℃ to 600 ℃for 4 hours. The crystal structure and surface morphology of Mg2Si thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Square resistances of samples were measured by four-point probe. The effects of different annealing temperatures on the structure, surface morphology and electrical properties of Mg2Si films were discussed. The results show that the single-phase Mg2Si thin films were obtained on the soda-lime glass substrate by in-situ annealing method. The films show the highest crystallinity, continuity and compactness and the lowest square resistance at the annealing temperature of 550 ℃. This provides an important reference for the design and preparation of Mg2Si thin film devices. |
| Key words: magnetron sputtering, in situ annealing, Mg2Si film, annealing temperature, square resistance |
