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原位退火温度对Mg2Si薄膜结构及方块电阻的影响
马新宇1,陈茜1,廖杨芳1,2,肖清泉1,陈庆1,姚紫祎1,谢泉1
0
(1贵州大学大数据与信息工程学院新型光电子材料与技术研究所,贵阳 550025 2贵州师范大学物理与电子科学学院,贵阳 550001)
摘要:
采用磁控溅射法和原位退火工艺在钠钙玻璃衬底上制备Mg2Si半导体薄膜。首先在钠钙玻璃衬底上依次溅射一定厚度的Si、Mg薄膜,冷却至室温后原位退火4 h,在400-600 ℃退火温度下制备出一系列Mg2Si薄膜样品。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)对Mg2Si薄膜样品的晶体结构和表面形貌进行表征,利用四探针测试仪测试薄膜样品的方块电阻,讨论了原位退火温度对Mg2Si薄膜结构、表面形貌及电学性能的影响。结果表明,采用原位退火方式成功在钠钙玻璃衬底上制备出单一相的Mg2Si薄膜,退火温度为550 ℃时,结晶度最好,连续性和致密性最强,方块电阻最小。这对后续Mg2Si薄膜器件的设计与制备提供了重要的参考
关键词:  磁控溅射,原位退火,Mg2Si薄膜,退火温度,方块电阻
DOI:
基金项目:国家自然科学基金项目(61264004),贵州省青年英才培养工程项目(黔省专合字[2012]152),贵州省科技厅、贵州大学联合资金项目(黔科合LH字[2014]7610),贵州省科技攻关项目(黔科合GY字[2011]3015),贵州省国际科技合作项目(黔科合外G字[2012]7004,[2013]7003),贵州省教育厅“125”重大科技专项项目(黔教合重大专项字[2012]003),贵州省自然科学基金项目(黔科合J字[2013]2209,[2014]2052),贵州大学引进人才科研资助项目(贵大人基合字[2012]022)。
Effects of In-situ Annealing Temperature on Structure and Square Resistance of Mg2Si Thin Films
Ma Xinyu1, Chen Qian1, Liao Yangfang1,2, Xiao Qingquan1, Chen Qing1, Yao Ziyi1,Xie quan1
(1 Institute of Advanced Semiconductor Materials and Technology, College of Big date and Information Engineering, Guizhou University, Guiyang 550025, China 2 School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001)
Abstract:
Semiconductor Mg2Si thin films were prepared on soda-lime glass substrates by magnetron sputtering and in-situ annealing. Si films and Mg films were sputtering-deposited sequentially on the soda-lime glass substrates and cooled at room temperature. Subsequently, a series of Mg2Si thin films were prepared at different annealing temperatures ranging from 400 ℃ to 600 ℃for 4 hours. The crystal structure and surface morphology of Mg2Si thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Square resistances of samples were measured by four-point probe. The effects of different annealing temperatures on the structure, surface morphology and electrical properties of Mg2Si films were discussed. The results show that the single-phase Mg2Si thin films were obtained on the soda-lime glass substrate by in-situ annealing method. The films show the highest crystallinity, continuity and compactness and the lowest square resistance at the annealing temperature of 550 ℃. This provides an important reference for the design and preparation of Mg2Si thin film devices.
Key words:  magnetron sputtering, in situ annealing, Mg2Si film, annealing temperature, square resistance

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