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GeTe 相变薄膜的结构及光学性能研究
田永红,张敏,辛霞,陈储君,卫芬芬,卢红兵
0
(陕西师范大学 物理学与信息技术学院;陕西师范大学 基础实验教学中心)
摘要:
相变材料可迅速地实现晶态与非晶态之间的相互转换, 在相变存储领域具有重要的应用.本文用脉冲激光沉积(PLD) 法在Si 衬底上制备了高质量的 GeTe 相变薄膜, 并对不同温度下退火的 GeTe 薄膜进行了结构和光学反射率的表征.实验结果表明, 室温沉积的 GeTe 薄膜为非晶态结构, 薄膜的结晶化温度约为 250℃.随着退火温度的增加, (202) 衍射峰位逐渐向低角方向移动, (202) 面间距逐渐增加, 这可能与退火薄膜中存在大的压应力有关.薄膜的光学反射率测试表明我们制备薄膜的晶态和非晶态具有高的反射率对比度. 以上结果表明 PLD 法制备的GeTe 薄膜在光学相变存储领域具有较好的应用潜能.
关键词:  GeTe, 脉冲激光沉积, 相变, 光学性能
DOI:
基金项目:
Structureand Optical Properties of GeTe Phase-change Films
TIAN Yonghong,ZHANG Min,XIN Xia,CHEN Chujun,WEI Fenfen,LU Hongbing
(School of Physics and Information Technology, Shaanxi Normal University;Basic Experimental Teaching Center ,Shaanxi Normal University)
Abstract:
Phase-change materials have important applications in the field of phase-change storage, due to their rapid and reversible transformations between the disordered amorphous and ordered crystalline states. In this paper, high quality GeTe phase-change films were prepared on Si substrates by pulsed laser deposition (PLD) , and the structure and optical properties of the GeTe films annealed at different temperatures were characterized. X-ray diffraction results showed that the GeTe films deposited at room temperature were amorphous, and the crystallization temperature of the films was about 250℃. With the increase of annealing temperature, the 2θ position of (202) peaks shifted to the low angle direction, and the (202) lattice plane distance increased gradually, which may be related to the large compressive stress in the crystallized films. Optical reflectivity measurements revealedthatthe GeTe films possessed a high reflectivity contrast between the crystalline and amorphous states. The above results suggest that the PLD-deposited GeTe films have a good potential for application in optical data storage.
Key words:  GeTe,Pulsedlaser deposition,Phase-change,Optical properties

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