| 引用本文： |
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韩雨,郭状,吴文彬.CaIrO3薄膜中的八面体扭转及金属绝缘转变[J].低温物理学报,2018,(1):6-11. [点击复制]
- HAN Yu,GUO Zhuang,WU Wenbin.The Octahedral Distorsionand MetalＧInsulator Transitionin CaIrO３ Film[J].LOW TEMPERATURE PHYSICAL LETTERS,2018,(1):6-11. [点击复制]
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| 摘要: |
| 本文采用激光脉冲沉积 (pulsed laser deposition, PLD) 方法NdGaO３ (110 ) (NGO) 和 (LaAlO３ )0.3 (Sr２ AlTaO６ )０.7 (001) (LSAT) 衬底上生长了厚度变化的钙钛矿结构CaIrO３ (CIO) 单晶薄膜．在这一体系中, 我们观测到了金属绝缘转变现象以及各向异性电输运行为, 并且尝试利用应变弛豫调节铱氧八面体绕[100] 轴的扭转角度, 改变金属绝缘转变温度(TMI ). 八面体的扭转角度在30nm 厚的样品中取得了最大值, 同时 CIO 的TMI取得了最小值. 我们推测是八面体的扭转影响了 CIO 薄膜的带隙宽度, 从而造成了TMI 的变化以及各向异性电输运行为 |
| 关键词: 5d电子金属氧化物薄膜,金属绝缘转变,八面体扭转 |
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| The Octahedral Distorsionand MetalＧInsulator Transitionin CaIrO３ Film |
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HAN Yu, GUO Zhuang, WU Wenbin
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| (Hefei National Laboratoryfor Physical Sciences atthe Microscals , University of Science and Technology of China) |
| Abstract: |
| The peroviskite CaIrO３ (CIO) monocrystalline films with variational thickness have been deposited on NdGaO３ (110 ) (NGO)and (LaAlO３ )0.3 (Sr２AlTaO６ )0.7 (001 ) (LSAT) substrates by the pulsed laser deposition (PLD ) technique． In this system, we observe the metal-insulator transition and the anisotropic electrical conductivity． The metal-insulator transition temperature of the CIO films can be changed by the rotation angle of the iridium oxide octahedron around [100] axis with strain relaxation． The rotation angle gets maximum in the film of 30 nm, and the transition temperature reached minimum in the same sample. We believe that the octahedron rotation can adjust the forbidden band width of the CIO thin films, causing the changed temperature and anisotropy of the metal-insulator transition. |
| Key words: 5d electronic metal oxidefilm, metalＧinsulatortransition, octahedral distorsion |
