| 引用本文： |
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陈豪,肖清泉,袁正兵,王坤,黎业羽,史娇娜,谢泉,陆书龙.基于silvaco-TCAD的In0.53Ga0.47As/InP红外探测器的仿真[J].低温物理学报,2018,(6):1-7. [点击复制]
- CHEN Hao,XIAO Qingquan,YUAN Zhengbing,WANG Kun,LI Yeyu,SHI Jiaona,XIE Quan,LU Shulong.Simulation on The In0.53Ga0.47As/InP Infrared Detectors by Silvaco-TCAD[J].LOW TEMPERATURE PHYSICAL LETTERS,2018,(6):1-7. [点击复制]
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| 摘要: |
| 采用silvaco-TCAD研究In0.53Ga0.47As/InP SAGCM-APD光电探测器，对探测器的结构参数对器件的电场分布、击穿电压和贯穿电压的影响进行仿真分析。研究表明电荷层对器件内部电场起到更好的调节作用，但过高的电荷层面密度会导致APD探测器的击穿电压与贯穿电压之差减小。倍增层厚度的增加使击穿电压先减小后增高，贯穿电压线性增加，同时耗尽层宽度变大，使器件电容减小。当倍增区厚度1 μm、偏压为-5 V时，器件电容密度达到了4.5×10-17 F/μm。反向偏置电压为30 V时，APD探测器在1.31 μm和1.55 μm波长下的响应度分别达到1 A/W和1.1 A/W |
| 关键词: In0.53Ga0.47As/InP SAGCM-APD探测器 InP倍增层 击穿电压 贯穿电压 |
| DOI：10.13380/j.ltpl.2019.01.001 |
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| 基金项目: |
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| Simulation on The In0.53Ga0.47As/InP Infrared Detectors by Silvaco-TCAD |
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CHEN Hao1, XIAO Qingquan1, YUAN Zhengbing1, WANG Kun1, LI Yeyu1, SHI Jiaona1, XIE Quan1, LU Shulong2
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| (1.College of Big Data and Information Engineering，Guizhou University，Guiyang 550025，China);2.Key Laboratory of Nano-devices and Applications,Suzhou Instituteof Nano-Tech and Nano-Bionic，Chinese Academy of Sciences，Suzhou 215123) |
| Abstract: |
| In0.53Ga0.47As/InP SAGCM-APD photodetector was studied by using the silvaco-TCAD software, and the influences of the main structural parametersof the detector on the electric field distribution, breakdown voltage, penetration voltage were simulated. The results show that the charge layer can adjust the internal electric field of the device, but too high doping concentration can lead to the decrease in the difference between the breakdown voltage and the punch-through voltage of the APD detector. The breakdown voltage of the APD device firstly decreases and then increases with increasing thickness of the InP multiplication layer, and the punch-through voltage increases linearly with increasing thickness of the InP multiplication layer.At the same time, the device capacitancedecreases with increasing width of the depletion layer, and the response speed of the device increases. The capacitance density is about 4.5×10-17 F/μm when the thickness of the InP multiplication layer is 1 μm, the reverse bias voltage is -5 V . The responsivity of the APD detector is 1 A/W and 1.1 A/W at the wavelength of 1.31 μm and 1.55 μm when the reverse bias voltage is -30 V |
| Key words: In0.53Ga0.47As/InP SAGCM-APD detector the InP multiplication layer breakdown voltage punch-through voltage |
