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退火温度和溅射时间对磁控溅射法制备 Mg2Si 薄膜的影响
陈茜,马新宇,廖杨芳,肖清泉,谢泉
0
(贵州大学大数据与信息工程学院新型光电子材料与技术研究所, 贵阳550025)
摘要:
采用磁控溅射法和原位退火工艺在钠钙玻璃衬底上制备 Mg2Si 薄膜。首先在钠钙玻璃衬底上交替溅射沉积两层Si、Mg 薄膜,冷却至室温后原位退火4 h,制备出一系列 Mg2Si 薄膜样品。通过 X 射线衍射仪(XRD) 、 扫描电子显微镜(SEM)对所得薄膜样品的晶体结构和表面形貌进行表征, 讨论了退火温度和溅射Si/Mg/Si/Mg 时间对制备 Mg2Si 薄膜的影响。结果表明,采用磁控溅射法在钠钙玻璃衬底上交替溅射两层Si、Mg 薄膜, 通过原位退火方式成功制备出单一相的 Mg2Si 薄膜,溅射Si/Mg/Si/Mg 的时间为12.5/9/12.5/9 min,退火温度为550 ℃ 时,制备的 Mg2Si 薄膜结晶度最好,连续性和致密性最强。这对后续 Mg2Si 薄膜器件的设计与制备提供了重要的参考。 积两层Si、Mg 薄膜, 冷却至室温后原位退火4 h, 制备出一系列 Mg2Si 薄膜样品. 通过 X 射线衍射仪(XRD) 、 扫描 电子显微镜(SEM)对所得薄膜样品的晶体结构和表面形貌进行表征, 讨论了退火温度和溅射Si/Mg/Si/Mg 时间 对制备 Mg2Si 薄膜的影响. 结果表明, 采用磁控溅射法在钠钙玻璃衬底上交替溅射两层Si、Mg 薄膜, 通过原位退火 方式成功制备出单一相的 Mg2Si 薄膜, 溅射Si/Mg/Si/Mg 的时间为12.5/9/12.5/9 min, 退火温度为550 ℃ 时, 制 备的 Mg2Si 薄膜结晶度最好, 连续性和致密性最强. 这对后续 Mg2Si 薄膜器件的设计与制备提供了重要的参考.
关键词:  磁控溅射, 原位退火, 交替溅射, 退火温度, 溅射时间
DOI:10.13380/j.ltpl.2019.02.008
基金项目:
The Effectsof Annealing TemperatureandSputtering Timeon The Preparationof Mg2Sifilms by MagnetronSputtering
CHEN Qian,MA Xinyu,LIAO Yangfang,XIAO Qingquan,XIE Quan
(Institute of New Optoelectronic Materials and Technology , Collegeof Big date and Information Engineering ,Guizhou University , Guiyang 550025, China)
Abstract:
Semiconductor Mg2Si thin films were prepared on soda-lime glass substrates by magnetron sputtering and in-situ annealing. Two layers of both Si film and Mg film were alternately sputtering-deposited sequentially on the soda-lime glass substrates and cooled at room temperature. Subsequently, a series of Mg2Si thin films were prepared by 4 hours'in-situ annealing. The crystal structure and surface morphology of Mg2Si thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) . The effects of annealing temperature and time on sputtered Si/Mg/Si/Mg films of Mg2Si thin films were discussed. The single-phase Mg2Si thin films were obtained by two layers of both Si film and Mg film alternately on soda-lime glass substrate by magnetron sputtering and in-situ annealing. The films that have the highest crystallinity, continuity and compactness were achieved with the annealing temperature of 550 ℃ and the Si/Mg/Si/Mg sputtering time of 12.5/9/12.5/9 min. The presented results provided an important reference for the design and preparation of Mg2Si thin film devices.
Key words:  Magnetron sputtering, in-situ annealing, alternate sputtering, annealing temperature, sputtering time

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