| 摘要: |
| In2Se3 是一种常见的 A2IIIB3 VI 型半导体, 在不同温度下可表现出不同的物相, 对应的晶格参数与物理性质也会有所不同. 在过去几十年间,In2Se3 的多相性引起了人们的关注, 各物相的晶体结构被广泛地研究. 近年来,研究发现α-In2Se3 具有优异的光电、压电性能以及独特的铁电性能, 可以预见它将在未来的半导体电子器件中发挥出重要的作用. 本文综述了一系列In2Se3 化合物的晶体结构与电子特性, 我们首先简要介绍了这些In2Se3 化合物的基本知识, 接着详细讨论了它们的晶体结构与电子特性, 最后对In2Se3 化合物的研究前景进行了展望. |
| 关键词: In2Se3 化合物, 晶体结构, 电子特性 |
| DOI：10.13380/j.ltpl.2019.04.001 |
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| 基金项目: |
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| Crystal Structures and Electronic Properties ofSeveralIn2Se3 Compounds |
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Wang Lei, Liu Huijun
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| (Key Laboratory of Artificial Micro-and Nano-Structures of Ministryof Education and School of Physics and Technology , Wuhan University , Wuhan 430072, China) |
| Abstract: |
| In2Se3 is a kind of A2IIIB3VI-type semiconductor, which can have various crystal structures and physical properties at different temperatures. In the past few decades, the poly-phase character of In2Se3 compounds has attracted great attention from science community. In recent years, it is found that α-In2Se3 have promising photoelectric, piezoelectric and ferroelectric properties which will play an important role in semiconducting electronic devices. This review summarizes the studies of crystal structures and electronic properties of a series of In2Se3 compounds. Firstly, we give a brief introduction of the basic information of In2Se3 . We then focus on their lattice parameters and electronic properties, and the future prospect is given in the end. |
| Key words: In2Se3 compounds, crystal structures, electronic properties |
