| 引用本文： |
-
唐鑫,张栖瑜,王会武,王镇.高临界电流密度 NbN 约瑟夫森结的制备和特性表征[J].低温物理学报,2019,(5):368-371. [点击复制]
- TANG Xin,ZHANG Xiyu,WANG Huiwu,WANG Zhen.Fabrication and Characterization of High Critical Current Density Epitaxial NbN/AlN/NbN Josephson Junctions[J].LOW TEMPERATURE PHYSICAL LETTERS,2019,(5):368-371. [点击复制]
|
|
| 摘要: |
| 我们开展了高临界电流密度的 NbN 约瑟夫森结的制备和特性研究. 利用直流磁控溅射方法在单晶 MgO (100)衬底上外延生长 NbN/AlN/NbN 三层膜, 并使用微加工工艺制备了 NbN 约瑟夫森隧道结, 在液氦温度下对 NbN 约瑟夫森结的电流-电压特性进行了测量, 实验结果表明,NbN 约瑟夫森结具有良好的隧穿特性, 其临界电流密度Jc 为10 kA/cm2 , 质量因子大于10, 能隙是5.7 mV, 这些实验结果为基于 NbN 结的超导数字电路研究奠定了坚实的基础. |
| 关键词: 约瑟夫森结,NbN 结, 临界电流密度 |
| DOI： |
|
| 基金项目: |
|
| Fabrication and Characterization of High Critical Current Density Epitaxial NbN/AlN/NbN Josephson Junctions |
|
TANG Xin, ZHANG Xiyu, WANG Huiwu, WANG Zhen
|
| (Shanghai Institute of Microsystem and Information Technology , Chinese Academy of Sciences ,Shanghai 200050,China) |
| Abstract: |
| We have developed NbN Josephsonjunctions with high critical current density. The epitaxial NbN/AlN/NbN trilayers were grown by DC magnetron sputtering on single crystal MgO(100) substrates. The NbN junctions based on these trilayers were fabricated with the micro fabrication technique. The current-voltage characteristicsof NbN Josephson junctions were measured at 4.2 K. The junctions show good tunneling properties with a large gap voltage of 5.7mV and the quality factor Rsg/RN above 10 for the junctions with a Jc of 10 kA/cm2 . These results will be useful for the development of superconducting digital circuits based on NbN junctions. |
| Key words: quantumdot, single |
