| 引用本文： |
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李 悦,陈 晨,曾华凌.二维α-In2Se2的铁电性与器件应用[J].低温物理学报,2019,(7):12-20. [点击复制]
- LI Yue,CHEN Chen,ZENG Hualing.Ferroelectricity and Device Application of Two Dimensional α-In2Se3[J].LOW TEMPERATURE PHYSICAL LETTERS,2019,(7):12-20. [点击复制]
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| 摘要: |
| 铁电体具有可控的非易失电极化，在现代电子学中有着广泛的应用，例如大容量电容器、新型二极管、铁电场效应晶体管、铁电隧道结等．伴随着电子元器件的不断微型化，传统铁电体面临着极大的挑战，即在器件减薄过程中受限于临界尺寸效应，铁电性很难稳定存在于纳米乃至单原子层二维极限厚度下．鉴于二维范德华材料具有界面饱和、层间相互作用弱、易于实现二维极限厚度等特性，因此，在二维材料家族中寻找室温二维铁电性将是解决传统铁电体瓶颈的有效方法．本文将首先回顾近年来二维铁电物性研究的相关背景，并针对其中在技术应用上较为重要的α-In２Se３ 面外铁电性作详细介绍，最后总结基于二维α-In２Se３ 的铁电器件应用进展。 |
| 关键词: 二维铁电，二维材料，α-In2Se3，铁电器件 |
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| Ferroelectricity and Device Application of Two Dimensional α-In2Se3 |
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| Abstract: |
| Owing to the controllable and non -volatile electric polarization, ferroelectrics have broad applications in modern electronics, such as high density capacitor, noveldiode, ferroelectricfield-effect transistors, and ferroelectric tunneling junction.With the miniaturization of electronic device, conventional ferroelectric ssuffergreat challenge. The ferroelectricity can not sustain when the film thickness is reduced to nanometer or single atomic layer limit．Two-dimensional (2D) materials are naturally with saturated interfacial chemistry, weak interaction between layers and the benefit of preparing stable ultra-thinfilmat 2D limit.Therefore, it is an effective approach to overcome the limitation in conventional ferroelectrics by exploring 2D ferroelectricity in van de Waals materials．In this paper, we will review the back ground of 2D ferroelectric study in recent years．We will introduce layered α-In2Se3 with out-of-plane ferroelectricity in details as a result of its importance in technical application．Finally we summary recent progress of ferroelectric device applications based on ferroelectric α-In2Se3 |
| Key words: Dferroelectricity, 2D materials, α-In2Se3, ferroelectric device |
