| 引用本文： |
-
肖宾宾,朱昌盛,丁建文,雷彬.ZrNCl薄层中基于固体离子导体场效应管的电场诱导的超导电性[J].低温物理学报,2020,(5):242-249. [点击复制]
- XIAO Binbin,ZHU Changsheng,DING Jianwen,LEI Bin.Electric Field Induced Superconductivity in ZrNCI Thin Flake by Solid-Ion-Conductor Based Field-Effect Transistor[J].LOW TEMPERATURE PHYSICAL LETTERS,2020,(5):242-249. [点击复制]
|
|
| 本文已被：浏览 427次 下载 4274次 |
码上扫一扫！ |
| ZrNCl薄层中基于固体离子导体场效应管的电场诱导的超导电性 |
|
肖宾宾1,2, 朱昌盛3, 丁建文2, 雷彬3
|
|
|
| (1.衡阳师范学院物理与电子工程学院,衡阳421002;2.湘潭大学物理系,纳米物理与稀土发光研究所,湘潭411105;3.中国科学技术大学物理系,合肥微尺度国家实验室,合肥230026) |
|
| 摘要: |
| 场效应晶体管(FET)可以通过电场可逆调控材料的载流子浓度,是一种控制二维材料系统电学性质的有效方法.最近,作者实验室发明了一种新的场效应晶体管器件,它利用固体离子导体(SIC)作为栅介质,通过电场驱动锂离子进出样品来调控样品的载流子浓度,从而控制样品的物理性质和相变.在本论文中,作者利用这种新型的固体离子导体基场效应管器件(SIC-FET)成功地调控了ZrNCl薄层的电学性质.通过施加电场,将固体锂离子导体中的锂离子插入ZrNCl薄层样品中,实现了样品从绝缘体到超导体的转变,最佳超导电性的中点临界温度约为15.1K.实验结果表明,固体离子导体基场效应管器件具有在层状材料中引入载流子的优异性能,该器件将是寻找新的超导体和其他新奇电子相的有效途径. |
| 关键词: 超导电性,薄膜超导,电场调控,栅压调控效应 |
| DOI： |
|
| 基金项目: |
|
| Electric Field Induced Superconductivity in ZrNCI Thin Flake by Solid-Ion-Conductor Based Field-Effect Transistor |
|
XIAO Binbin1, ZHU Changsheng2, DING Jianwen3, LEI Bin2
|
| (1.College of Physics and Electronics Engineering, Hengyang Normal University, Hengyang, Hunan 421002, China;2.Hefei National Laboratory for Physical Science at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China;3.Department of Physics and Institute for Nanophysics and Rare-earth Luminescence, Xiangtan University, Xiangtan, Hunan 411105, China) |
| Abstract: |
| Gating by field-effect transistors (FETs) is an effective way to control electronic properties in two-dimensional systems by reversibly tuning charge carrier density. Recently, our group has developed a new field-effect transistor (FET) device by using a solid ion conductor the gate dielectric, which can tune the carrier density of samples by driving Lit in and out of the samples and consequently control the physical properties and phase transitions. Here, by using such SIC-FET device, we have successfully modulated the electronic properties of ZrNCl thin flakes. By driving Lit into the ZrNCl thin flakes via the SIC-FET, an insulator-to-superconductor transition is realized and the midpoint critical temperature (T mid) for the optimal superconductivity is about 15.1K. The present results demonstrate the excellent capability of the SIC-FET device to introduce the charge carriers in layered materials. The SIC-FET would be an effective way to search for new superconductors and other novel electronic phases. |
| Key words: Superconductivity, superconductivity of thin film, electric field tuning, gating effect |