| 引用本文： |
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郭俊梅,王锦仁,刘科敏,孙琳,张玉宾,徐胜楠.Fe 掺杂的 GaN 薄膜的结构和铁磁性[J].低温物理学报,2023,(1):59-63. [点击复制]
- GUO Junmei,WANG Jinren,LIU Kemin,SUN Lin,ZHANG Yubin,XU Shengnan.Ferromagnetism and Structure in Fe-doped GaN Films[J].LOW TEMPERATURE PHYSICAL LETTERS,2023,(1):59-63. [点击复制]
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| 摘要: |
| 本文通过高温氨化由磁控溅射方法制备的 Ga2 O3 :Fe 薄膜, 成功地在单晶硅(100) 基底上制备了 Fe 掺杂的 GaN 薄膜. X 射线衍射结果显示Fe 掺杂浓度为0% ~7% 的 GaN 薄膜均未发现第二相. 磁性测量表明所有Fe 掺杂的样品均显示出室温铁磁性, 而且每个 Fe 原子的磁矩随 Fe 浓度的增加而减小,Fe 的浓度为1 % 时每个 Fe 的磁矩最大, 最大值为1 .92μB/Fe. |
| 关键词: 铁磁性, 结构,GaN, 磁控溅射, 高温氨化 |
| DOI： |
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| Ferromagnetism and Structure in Fe-doped GaN Films |
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GUO Junmei, WANG Jinren, LIU Kemin, SUN Lin, ZHANG Yubin, XU Shengnan
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| (Sifang College , Shijiazhuang Tiedao University , Shijiazhuang 051132) |
| Abstract: |
| Fe-doped GaN films have been successfully fabricated on silicon (100) substrates through ammoniating Ga2 O3 :Fe films underflowingammoniaatmosphereatthetemperatureof950°C. The structure of the samples was characterized by X-ray diffraction (XRD) . No second phases are found with the increasing of Fe ion concentration from 0% to 7% . Magnetic measurements indicate that all the Fe-doped films were ferromagnetic at room temperature, and the moment per Fe atom decreases with increasing Fe concentration. The largest magnetic moment observed was 1 .92μB/Fe for Ga1 -xFex N (x =0.01) film. |
| Key words: Ferromagnetism, Structure, GaN, RF alternate magnetron sputtering, Ammoniation |
