引用本文: |
-
侯冬雨,李志青.γ -Al2O3/BaSnO3 异质结界面电子结构研究[J].低温物理学报,2024,(2):131-142. [点击复制]
- HOU Dongyu,LI Zhiqing.Electrical Structure of the Interface of γ-Al2O3/BaSnO3 Heterostructure[J].LOW TEMPERATURE PHYSICAL LETTERS,2024,(2):131-142. [点击复制]
|
|
|
|
本文已被:浏览 211次 下载 377次 |
码上扫一扫! |
γ -Al2O3/BaSnO3 异质结界面电子结构研究 |
侯冬雨, 李志青
|
|
(天津市低维功能材料物理与制备技术重点实验室, 天津大学物理系, 天津300350) |
|
摘要: |
本文利用第一性原理计算研究了γ-Al2O3/BaSnO3 异质结中二维电子气 (2DEG) 的形成机制. 计算结果表明当γ-Al2O3 薄层的厚度超过临界厚度1.5 uc 时,γ-Al2O3/BaSnO3 异质结界面处会有2DEG 产生, 此时2DEG 的形成是由于界面处的极性不连续. 在该异质结构中, 导带电子分布在非简并的Sn5s 轨道上, 具有较低的电子有效质量. 当γ-Al2O3 薄膜中存在氧空位时,极化电场消失, 异质结界面处仍然有2DEG 产生, 且2DEG 的产生不存在γ-Al2O3 临界厚度的限制. 此时界面处的2DEG 源于异质结构中的氧空位. |
关键词: 锡酸钡, 异质结, 二维电子气 |
DOI: |
|
基金项目:国家自然科学基金面上(批准号:12174282)资助的课题 |
|
Electrical Structure of the Interface of γ-Al2O3/BaSnO3 Heterostructure |
HOU Dongyu, LI Zhiqing
|
(天津市低维功能材料物理与制备技术重点实验室, 天津大学物理系, 天津300350) |
Abstract: |
In this paper, we constructγ-Al2O3/BaSnO3 heterojunctions and their electronic structures are investigated using first-principles calculations. The results show that 2DEGis generatedattheinterfaceoftheγ-Al2O3/BaSnO3 heterojunctions and when the thickness of the γ-Al2O3 film exceeds the critical thickness by 1.5 uc. The formation of 2DEG is due to the polar discontinuity at the interface. The electrons at interface are distributed in the Sn 5s orbital, which has a low electron effective mass and is expected to have high mobility at room temperature. When there is an oxygen vacancy in theγ-Al2O3 film, the polarization electric field disappears, and2DEGstillexistsattheheterojunctioninterface, and there is no limitation of the critical thickness for the γ-Al2O3 film. In this case, 2DEGisformed due to the oxygen vacancy in the heterostructure. |
Key words: Barium stannate, Heterojunction, Two-dimensional electron gas |
|
|
|
|
|