| 摘要: |
| 对极低温下FinFET器件进行建模。将4对n/p Bulk FinFET器件在77K,120K,200K,250K,300K五个温度下进行直流和射频测试,对处理完的数据进行分析,器件在极低温下阈值电压会变大,迁移率会变大,器件会具有比常温更好的特性。在建立极低温FinFET模型的时候,首先对常温器件进行参数提取,再对低温下常温欠缺的部分如阈值电压、迁移率进行参数优化,从提取的参数对BSIM-CMG模型进行改进。对于RF FinFET的参数提取是基于小信号等效电路的,对提取的参数进行温度相关性方程的改进。经验证改进的模型具有可靠性。 |
| 关键词: 极低温 FinFET BSIM-CMG 建模 |
| DOI： |
| 投稿时间：2019-12-05修订日期：2019-12-06 |
| 基金项目: |
|
| Modeling FinFET Devices Based on BSIM-CMG at Cryogenic Temperature |
|
WU yuxin, LIU jun, WANG guofang, LUO lin
|
| (Key Laboratory of RF Circuits and Systems of Ministry of Education,Hangzhou Dianzi University) |
| Abstract: |
| Model FinFET devices at cryogenic temperature. Four pairs of n / p Bulk FinFET devices were tested at five temperatures of 77K, 120K, 200K, 250K, and 300K. After analyzing the processed data, the threshold voltage of the device will increase at cryogenic temperatures and the mobility will become larger and the device will have better characteristics than normal temperature. Establishing the cryogenic temperature FinFET model, the parameters of the normal temperature device are extracted first, and then the parameters that are lacking at normal temperature such as the threshold voltage and mobility are optimized, and the BSIM-CMG model is improved from the extracted parameters. The parameter extraction of RF FinFET is based on the small signal equivalent circuit, and the temperature correlation equation is improved for the extracted parameters. The improved model is verified to be reliable. |
| Key words: cryogenic, FinFET, model, BSIM-CMG |