| 摘要: |
| 围绕着过渡金属二硫族化合物（ 简称TMDs）材料的研究在近十年来一直是相关领域的热点。本文利用γ射线辐照，在单层MoS2中引入辐照缺陷，利用光谱学手段结合原子力显微术研究辐照缺陷对单层MoS2光谱性质和能谷特性的影响。结果表明，γ射线成功地在单层MoS2中引入了辐照缺陷，辐照缺陷对其室温拉曼谱和光致发光谱（photoluminescence, 简称PL）影响较小，但对其低温PL特性有显著影响，并且缺陷束缚激子呈现出与自由激子截然不同的谷极化特性；相较于自由激子，缺陷束缚激子的谷极化度对外加磁场的变化更为敏感，并在面外磁场>2T时达到饱和，保持在约30%。 |
| 关键词: 过渡金属二硫族化合物，γ射线，缺陷，光致发光，谷极化 |
| DOI： |
| 投稿时间：2023-03-09修订日期：2023-03-20 |
| 基金项目:安徽省量子通信与量子计算机重大项目引导性项目AHY090200，中国科学院战略性先导科技专项（C类）XDC07010000 |
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| Study on ?-ray-irradiated defect modulated spectroscopic properties of monolayer MoS2 |
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He Jun Cai, Li Tai Shen, She Yong Zhi, Jiang Yu Fei, Pan Nan
|
| (USTC) |
| Abstract: |
| The research on transition metal dichalcogenides (TMDs) has been a hotspot in the related fields in the past decade. In this paper, high-energy ??ray is used to introduce radiated defects into monolayer MoS2. The effects of irradiated defects on the spectral and valley properties of monolayer MoS2 are studied by optical spectra combined with atomic force microscopy. The results show that ?-ray successfully introduces irradiated defects into the monolayer MoS2. These irradiated defects have limited effect on its room-temperature Raman spectrum and photoluminescence (PL) spectrum, but have a significant effect on its low-temperature PL. The defect-bound excitons show a valley polarization much different from the free excitons; Compared with the latter, the valley polarization of the defect-bound exciton is more sensitive to the change of external magnetic field, and reaches saturation when the out-of-plane magnetic field is beyond ?2T, maintaining a degree of valley polarization of ?30%. |
| Key words: transition metal dichalcogenides (TMDs), ?-ray, defects, photoluminescence (PL), valley polarization |