| 摘要: |
| 二维铁电材料在实际存储器中有很大的应用前景，有望革命性地改变下一代纳米电子学和自旋电子学。我们提出了基于graphene/2?ReS2/PtTe2和graphene/n?ReS2/h-BN/PtTe2（n = 2，3，4）异质结构的范德华铁电隧道结，并利用非平衡格林函数和密度泛函理论研究了这些范德华铁电隧道结的输运性质。计算结果表明，在零偏压下，graphene/2?ReS2/PtTe2, graphene/2?ReS2/h-BN/PtTe2, graphene/3?ReS2/h-BN/PtTe2和graphene/4?ReS2/h-BN/PtTe2的最大隧穿电致电阻比率分别可达25%、235%、615%和223%。通过施加外部电压，最大隧穿电致电阻比率可以进一步提高到537%、2.82×104%、2.06×105%和1.05×106%。更有趣的是，我们的研究结果表明graphene/2?ReS2/PtTe2和graphene/n?ReS2/h-BN/PtTe2（n = 2, 3和4）铁电隧道结表现出负微分电阻效应，该效应可以通过外加电场来调节。graphene/n?ReS2/h-BN/PtTe2（n = 2, 3和4）铁电隧道结还可以表现出二极管特性。我们对基于ReS2铁电隧道结输运性质的理论发现为范德华铁电隧道结的实验研究提供了重要的理论指导。 |
| 关键词: 二维材料 铁电隧道结 隧穿电致电阻 负微分电阻效应 第一性原理计算 |
| DOI： |
| 投稿时间：2024-06-24修订日期：2024-08-03 |
| 基金项目:山西省应用基础研究计划 (No. 20210302124252） |
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| Theoretical study on electronic transport properties of van der Waals ferroelectric tunnel junctions based on sliding ReS2 multilayers |
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Dong Xinlong1, Sun Xiaowen1, Qiao Dan1, Li Zeyu2, Qiao Zhenhua2
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| (1.Shanxi Normal University;2.University of Science and Technology of China) |
| Abstract: |
| The discovery of ferroelectricity in two-dimensional (2D) van der Waals (vdW) materials has brought significant functionalities to the 2D materials family, potentially revolutionizing next-generation nanoelectronics and spintronics. Here, we propose van der Waals (vdW) ferroelectric tunnel junctions (FTJs) based on graphene/2?ReS2/PtTe2 and graphene/n?ReS2/h-BN/PtTe2 (n = 2, 3, 4) heterostructures, and investigate the transport properties of these vdW FTJs by using non-equilibrium Green's function combined with density functional theory. The calculated results show that at zero bias the maximum TER ratios of graphene/2?ReS2/PtTe2, graphene/2?ReS2/h-BN/PtTe2, graphene/3?ReS2/h-BN/PtTe2 and graphene/4?ReS2 /h-BN/PtTe2 FTJs can reach 25%, 235%, 615% and 223%, respectively. By applying an external bias voltage, the TER can be further enhanced to 537%, 2.82×104%, 2.06×105% and 1.05×106%, respectively. More interestingly, our results indicated that graphene/2?ReS2/PtTe2, and graphene/n?ReS2/h-BN/PtTe2 (n = 2, 3 and 4) FTJs can exhibit the negative differential resistance effect, which can be modulated by applying electric field. The graphene/n?ReS2/h-BN/PtTe2 (n = 2, 3 and 4) FTJs can exhibit diode characteristics. Our theoretical findings on the transport properties of ReS2-based FTJs provide valuable insights for potential experimental studies in the field of van der Waals ferroelectric tunnel junctions. |
| Key words: Two-dimensional materials Ferroelectric tunnel junctions Tunneling electroresistance Negative differential resistance effect First principles calculation. |